Electrical-optical characterization of multijunction solar cells under 2000X concentration
Date Issued
2014
Author(s)
Bonsignore, Gaetano
•
Gallitto, Aurelio Agliolo
•
Agnello, Simonpietro
•
•
•
Cannas, Marco
•
•
Dentici, Ignazio
•
Gelardi, Franco Mario
•
•
Montagnino, Fabio Maria
•
Paredes, Filippo
•
Abstract
In the framework of the FAE "Fotovoltaico ad Alta Efficienza" ("High Efficiency Photovoltaic") Research Project (PO FESR Sicilia 2007/2013 4.1.1.1), we have performed electrical and optical characterizations of commercial InGaP/InGaAs/Ge triple-junction solar cells (1 cm2) mounted on a prototype HCPV module, installed in Palermo (Italy). This system uses a reflective optics based on rectangular off-axis parabolic mirror with aperture 45×45 cm2 leading to a geometrical concentration ratio of 2025. In this study, we report the I-V curve measured under incident power of about 700 W/m2 resulting in an electrical power at maximum point (PMP) of 41.4 W. We also investigated the optical properties by the electroluminescence (EL) spectra of the top (InGaP) and middle (InGaAs) subcells. From the analysis of the experimental data we extracted the bandgap energies of these III-V semiconductors in the range 305÷385 K.
Coverage
0094243X
Series
Volume
1616
Start page
102
Conferenece
10th International Conference on Concentrator Photovoltaic System CPV-10
Conferenece place
Albuquerque, New Mexico, USA
Conferenece date
7–9 April, 2014
Issn Identifier
0094-243X
Ads BibCode
2014AIPC.1616..102B
Rights
open.access
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