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Forming-Free and Self-Rectifying Resistive Switching Effect in Anodic Titanium Dioxide-Based Memristors

Date Issued
2018
Author(s)
Aglieri, V.
•
Lullo, G.
•
Mosca, M.
•
MacAluso, R.
•
Zaffora, A.
•
Di Franco, F.
•
Santamaria, M.
•
•
Razzari, L.
DOI
Abstract
The paper presents the resistive switching of electroforming-free Ti/anodic-TiO 2 /Cu memristors. Anodic TiO 2 thin films were prepared by anodizing Ti layers. Microscale devices were fabricated by direct laser-assisted photolithography. Experimental results showed a bipolar and self-rectifying behavior of the devices, which could be useful for crossbar array configurations. Moreover, a gradual resistive switching of the devices in both directions was observed, indicating the presence of multi-level resistance states.
Coverage
2018 IEEE 4th International Forum on Research and Technology for Society and Industry (RTSI)
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1
Conferenece
2018 IEEE 4th International Forum on Research and Technology for Society and Industry (RTSI)
Conferenece place
Palermo, Italy
Conferenece date
10-13 September, 2018
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open.access
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