Characterization of a novel pixelated Silicon Drift Detector (PixDD) for high-throughput X-ray astrophysics
Journal
Date Issued
2018
Author(s)
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•
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Bellutti, P.
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Bertuccio, G.
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Borghi, G.
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Caselle, M.
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Cirrincione, D.
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Ficorella, F.
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Gandola, M.
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Grassi, M.
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Malcovati, P.
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Mele, F.
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Picciotto, A.
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Rachevski, A.
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Rashevskaya, I.
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Sammartini, M.
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Zampa, G.
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Zampa, N.
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Zorzi, N.
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Vacchi, A.
Abstract
Multi-pixel fast silicon detectors represent the enabling technology for the next generation of space-borne experiments devoted to high-resolution spectral-timing studies of low-flux compact cosmic sources. Several imaging detectors based on frame-integration have been developed as focal plane devices for X-ray space-borne missions but, when coupled to large-area concentrator X-ray optics, these detectors are affected by strong pile-up and dead-time effects, thus limiting the time and energy resolution as well as the overall system sensitivity. The current technological gap in the capability to realize pixelated silicon detectors for soft X-rays with fast, photon-by-photon response and nearly Fano-limited energy resolution therefore translates into the unavailability of sparse read-out sensors suitable for high throughput X-ray astronomy applications. In the framework of the ReDSoX Italian collaboration, we developed a new, sparse read-out, pixelated silicon drift detector which operates in the energy range 0.5-15 keV with nearly Fano-limited energy resolution (<=150 eV FWHM @ 6 keV) at room temperature or with moderate cooling (~0°C to +20°C). In this paper, we present the design and the laboratory characterization of the first 16-pixel (4 × 4) drift detector prototype (PixDD), read-out by individual ultra low-noise charge sensitive preamplifiers (SIRIO) and we discuss the future PixDD prototype developments.
Volume
13
Issue
9
Start page
P09011
Issn Identifier
1748-0221
Ads BibCode
2018JInst..13P9011E
Rights
open.access
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