Please use this identifier to cite or link to this item:
http://hdl.handle.net/20.500.12386/35190
Title: | Forming-Free and Self-Rectifying Resistive Switching Effect in Anodic Titanium Dioxide-Based Memristors | Authors: | Aglieri, V. Lullo, G. Mosca, M. MacAluso, R. Zaffora, A. Di Franco, F. Santamaria, M. LO CICERO, UGO Razzari, L. |
Issue Date: | 2018 | Volume: | 2018 IEEE 4th International Forum on Research and Technology for Society and Industry (RTSI) | First Page: | 1 | Abstract: | The paper presents the resistive switching of electroforming-free Ti/anodic-TiO 2 /Cu memristors. Anodic TiO 2 thin films were prepared by anodizing Ti layers. Microscale devices were fabricated by direct laser-assisted photolithography. Experimental results showed a bipolar and self-rectifying behavior of the devices, which could be useful for crossbar array configurations. Moreover, a gradual resistive switching of the devices in both directions was observed, indicating the presence of multi-level resistance states. | Conference Name: | 2018 IEEE 4th International Forum on Research and Technology for Society and Industry (RTSI) | Conference Place: | Palermo, Italy | Conference Date: | 10-13 September, 2018 | URI: | http://hdl.handle.net/20.500.12386/35190 | URL: | https://ieeexplore.ieee.org/document/8548396 https://api.elsevier.com/content/abstract/scopus_id/85060065330 |
ISBN: | 9781538662823 | DOI: | 10.1109/RTSI.2018.8548396 | Fulltext: | open |
Appears in Collections: | 3.01 Contributi in Atti di convegno |
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File | Description | Size | Format | |
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Aglieri2018a - Forming-Free and Self-Rectifying Resistive Switching Effect in Anodic Titanium Dioxide-Based Memristors_Postprint.pdf | Postprint | 1.28 MB | Adobe PDF | View/Open |
Aglieri2018a - Forming-Free and Self-Rectifying Resistive Switching Effect in Anodic Titanium Dioxide-Based Memristors.pdf | [Administrators only] | 1.61 MB | Adobe PDF |
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